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IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc

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IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS41LV16100B-50KL

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : DRAM - EDO

Memory Size : 16Mbit

Memory Organization : 1M x 16

Memory Interface : Parallel

Clock Frequency : -

Write Cycle Time - Word, Page : -

Access Time : 25 ns

Voltage - Supply : 3V ~ 3.6V

Operating Temperature : 0°C ~ 70°C (TA)

Mounting Type : Surface Mount

Package / Case : 42-BSOJ (0.400", 10.16mm Width)

Supplier Device Package : 42-SOJ

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Product Details

DESCRIPTION

TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

FEATURES

• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available

Specifications

AttributeAttribute Value
ManufacturerISSI
Product CategoryIC Chips
Series-
Packaging Tube
Package-Case42-BSOJ (0.400", 10.16mm)
Operating-Temperature 0°C ~ 70°C (TA)
InterfaceParallel
Voltage-Supply 3 V ~ 3.6 V
Supplier-Device-Package42-SOJ
Memory Capacity 16M (1M x 16)
Memory-Type DRAM - EDO
Speed50ns
Format-MemoryRAM

Descriptions

DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ









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IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc Images

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