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IS61DDB21M18A-300B4L IC SRAM 18MBIT PARALLEL 165LFBGA ISSI, Integrated Silicon Solution Inc

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IS61DDB21M18A-300B4L IC SRAM 18MBIT PARALLEL 165LFBGA ISSI, Integrated Silicon Solution Inc

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS61DDB21M18A-300B4L

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Synchronous, DDR II

Memory Size : 18Mbit

Memory Organization : 1M x 18

Memory Interface : Parallel

Clock Frequency : 300 MHz

Write Cycle Time - Word, Page : -

Access Time : -

Voltage - Supply : 1.71V ~ 1.89V

Operating Temperature : 0°C ~ 70°C (TA)

Mounting Type : Surface Mount

Package / Case : 165-LBGA

Supplier Device Package : 165-LFBGA (13x15)

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Product Details

DESCRIPTION

The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series -
Packaging Tray
Package-Case 165-LBGA
Operating-Temperature 0°C ~ 70°C (TA)
Interface Common I/O
Voltage-Supply 1.71 V ~ 1.89 V
Supplier-Device-Package 165-LFBGA (13x15)
Memory Capacity 18M (1M x 18)
Memory-Type SRAM - Synchronous, DDR II
Speed 300MHz
Format-Memory RAM

Descriptions

SRAM - Synchronous, DDR II Memory IC 18Mb (1M x 18) Parallel 300MHz 165-LFBGA (13x15)
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
SRAM 18Mb, 1M x 18 DDR-II Sync SRAM

China IS61DDB21M18A-300B4L IC SRAM 18MBIT PARALLEL 165LFBGA ISSI, Integrated Silicon Solution Inc factory

IS61DDB21M18A-300B4L IC SRAM 18MBIT PARALLEL 165LFBGA ISSI, Integrated Silicon Solution Inc Images

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