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IS42S32800J-7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI, Integrated Silicon Solution Inc

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IS42S32800J-7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI, Integrated Silicon Solution Inc

Name: IS42S32800J7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS42S32800J-7BLI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM

Memory Size : 256Mbit

Memory Organization : 8M x 32

Memory Interface : Parallel

Clock Frequency : 143 MHz

Write Cycle Time - Word, Page : -

Access Time : 5.4 ns

Voltage - Supply : 3V ~ 3.6V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 90-TFBGA

Supplier Device Package : 90-TFBGA (8x13)

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Product Details

OVERVIEW

ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

GENERAL DESCRIPTION
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.

FEATURES

• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial temperature availability
• Package 400-mil 86-pin TSOP II

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	90-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	3 V ~ 3.6 V
Supplier-Device-Package	90-TFBGA (8x13)
Memory Capacity	256M (8M x 32)
Memory-Type	SDRAM
Speed	143MHz
Format-Memory	RAM

Descriptions

SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA

DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT

China IS42S32800J-7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI, Integrated Silicon Solution Inc factory

IS42S32800J-7BLI IC DRAM 256MBIT PAR 90TFBGA ISSI, Integrated Silicon Solution Inc Images

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