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IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon Solution Inc

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IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon Solution Inc

Name: IS61NLP25636A200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS61NLP25636A-200TQLI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Synchronous, SDR

Memory Size : 9Mbit

Memory Organization : 256K x 36

Memory Interface : Parallel

Clock Frequency : 200 MHz

Write Cycle Time - Word, Page : -

Access Time : 3.1 ns

Voltage - Supply : 3.135V ~ 3.465V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 100-LQFP

Supplier Device Package : 100-LQFP (14x20)

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Product Details

DESCRIPTION

The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
• Power supply:
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	IS61NLP25636A
Type	Synchronous
Packaging	Tray Alternate Packaging
Unit-Weight	0.023175 oz
Mounting-Style	SMD/SMT
Package-Case	100-LQFP
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	3.135 V ~ 3.465 V
Supplier-Device-Package	100-TQFP (14x20)
Memory Capacity	9M (256K x 36)
Memory-Type	SRAM - Synchronous
Speed	200MHz
Data-Rate	SDR
Access-Time	3.1 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 85 C
Operating temperature range	- 40 C
Interface-Type	Parallel
Organization	256 k x 36
Supply-Current-Max	280 mA
Supply-Voltage-Max	3.465 V
Supply-Voltage-Min	3.135 V
Package-Case	TQFP-100
Maximum-Clock-Frequency	200 MHz

Functional compatible component

Form,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
IS61NLP25636A-200TQI Memory	256KX36 ZBT SRAM, 3.1ns, PQFP100, TQFP-100	Integrated Silicon Solution Inc	IS61NLP25636A-200TQLI vs IS61NLP25636A-200TQI
IS61NLP25636A-200TQL Memory	ZBT SRAM, 256KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100	Integrated Silicon Solution Inc	IS61NLP25636A-200TQLI vs IS61NLP25636A-200TQL

Descriptions

SRAM - Synchronous Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 100-TQFP (14x20)

SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 100-Pin TQFP

SRAM 8Mb 256Kx36 200Mhz Sync SRAM 3.3v

China IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon Solution Inc factory

IS61NLP25636A-200TQLI IC SRAM 9MBIT PARALLEL 100TQFP ISSI, Integrated Silicon Solution Inc Images

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