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AT25DF021A-SSHN-T IC FLASH 2MBIT SPI 104MHZ 8SOIC Renesas Design Germany GmbH

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AT25DF021A-SSHN-T IC FLASH 2MBIT SPI 104MHZ 8SOIC Renesas Design Germany GmbH

Brand Name : Renesas Design Germany GmbH

Model Number : AT25DF021A-SSHN-T

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Non-Volatile

Memory Format : FLASH

Technology : FLASH

Memory Size : 2Mbit

Memory Organization : 256K x 8

Memory Interface : SPI

Clock Frequency : 104 MHz

Write Cycle Time - Word, Page : 8µs, 2.5ms

Access Time : -

Voltage - Supply : 1.65V ~ 3.6V

Operating Temperature : -40°C ~ 85°C (TC)

Mounting Type : Surface Mount

Package / Case : 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package : 8-SOIC

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Product Details

Description

The AT25DF021 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shad owed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF021, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.

Features

• Single 2.3V - 3.6V or 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 66 MHz Maximum Operating Frequency
– Clock-to-Output (tV) of 6 ns Maximum
• Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
• Individual Sector Protection with Global Protect/Unprotect Feature
– Four Sectors of 64 Kbytes Each
• Hardware Controlled Locking of Protected Sectors via WP Pin
• 128-Byte Programmable OTP Security Register
• Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
• Fast Program and Erase Times
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 450 ms Typical 64-Kbyte Block Erase Time
• Automatic Checking and Reporting of Erase/Program Failures
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 7 mA Active Read Current (Typical at 20 MHz)
– 15 µA Deep Power-Down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil Wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)

Specifications

Attribute Attribute Value
Manufacturer Adesto Technologies
Product Category Memory ICs
Series -
Packaging Alternate Packaging
Package-Case 8-SOIC (0.154", 3.90mm Width)
Operating-Temperature -40°C ~ 85°C (TC)
Interface SPI Serial
Voltage-Supply 1.65 V ~ 3.6 V
Supplier-Device-Package 8-SOIC
Memory Capacity 2M (256K x 8)
Memory-Type FLASH
Speed 104MHz
Format-Memory FLASH

Descriptions

FLASH Memory IC 2Mb (256K x 8) SPI 104MHz 8-SOIC
2-Mbit, 1.65V Minimum SPI Serial Flash Memory with Dual-I/O Support
Flash Memory 8-SOIC-N, IND TEMP, 1.65V, T&R

China AT25DF021A-SSHN-T IC FLASH 2MBIT SPI 104MHZ 8SOIC Renesas Design Germany GmbH factory

AT25DF021A-SSHN-T IC FLASH 2MBIT SPI 104MHZ 8SOIC Renesas Design Germany GmbH Images

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