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W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics

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W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics

Name: W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics
Brand: Winbond Electronics
Price: 1 USD

Brand Name : Winbond Electronics

Model Number : W949D6DBHX5I

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - Mobile LPDDR

Memory Size : 512Mbit

Memory Organization : 32M x 16

Memory Interface : Parallel

Clock Frequency : 200 MHz

Write Cycle Time - Word, Page : 15ns

Access Time : 5 ns

Voltage - Supply : 1.7V ~ 1.95V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 60-TFBGA

Supplier Device Package : 60-VFBGA (8x9)

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Product Details

GENERAL DESCRIPTION

W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers a data bandwidth of up to 500M words per second (-4). To fully comply with the personal computer industrial standard, W9425G6DH is sorted into four speed grades: -4, -5, -6 and -75. The -4 is compliant to the DDR500/CL3 specification. The -5 is compliant to the DDR400/CL3 specification. The -6 is compliant to the DDR333/CL2.5 specification (the -6I grade which is guaranteed to support -40°C ~ 85°C). The -75 is compliant to the DDR266/CL2 specification (the 75I grade which is guaranteed to support -40°C ~ 85°C).

FEATURES

• 2.5V ±0.2V Power Supply for DDR266/DDR333
• 2.6V ±0.1V Power Supply for DDR400/DDR500
• Up to 250 MHz Clock Frequency
• Double Data Rate architecture; two data transfers per clock cycle
• Differential clock inputs (CLK and CLK )
• DQS is edge-aligned with data for Read; center-aligned with data for Write
• CAS Latency: 2, 2.5 and 3
• Burst Length: 2, 4 and 8
• Auto Refresh and Self Refresh
• Precharged Power Down and Active Power Down
• Write Data Mask
• Write Latency = 1
• 7.8µS refresh interval (8K / 64 mS refresh)
• Maximum burst refresh cycle: 8
• Interface: SSTL_2
• Packaged in TSOP II 66-pin, 400 mil, 0.65 mm pin pitch, using Pb free with RoHS compliant

Specifications

Attribute	Attribute Value
Manufacturer	Winbond Electronics
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	60-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	1.7 V ~ 1.95 V
Supplier-Device-Package	60-VFBGA (8x9)
Memory Capacity	512M (32M x 16)
Memory-Type	Mobile LPDDR SDRAM
Speed	200MHz
Format-Memory	RAM

Descriptions

SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 200MHz 5ns 60-VFBGA (8x9)

DRAM Chip Mobile LPDDR SDRAM 512Mbit 32Mx16 1.8V 60-Pin VFBGA

China W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics factory

W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics Images

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