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AT25DF041B-MAHN-T IC FLASH 4MBIT SPI 104MHZ 8UDFN Renesas Design Germany GmbH

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AT25DF041B-MAHN-T IC FLASH 4MBIT SPI 104MHZ 8UDFN Renesas Design Germany GmbH

Brand Name : Renesas Design Germany GmbH

Model Number : AT25DF041B-MAHN-T

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Non-Volatile

Memory Format : FLASH

Technology : FLASH

Memory Size : 4Mbit

Memory Organization : 512K x 8

Memory Interface : SPI

Clock Frequency : 104 MHz

Write Cycle Time - Word, Page : 8µs, 2.5ms

Access Time : -

Voltage - Supply : 1.65V ~ 3.6V

Operating Temperature : -40°C ~ 85°C (TC)

Mounting Type : Surface Mount

Package / Case : 8-UFDFN Exposed Pad

Supplier Device Package : 8-UDFN (2x3)

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Product Details

Description

The AT25DF041A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF041A, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.

Features

• Single 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 70 MHz Maximum Clock Frequency
• Flexible, Uniform Erase Architecture
– 4-Kbyte Blocks
– 32-Kbyte Blocks
– 64-Kbyte Blocks
– Full Chip Erase
• Individual Sector Protection withGlobal Protect/Unprotect Feature
– One 16-Kbyte Top Boot Sector
– Two 8-Kbyte Sectors
– One 32-Kbyte Sector
– Seven 64-Kbyte Sectors
• Hardware Controlled Locking of Protected Sectors
• Flexible Programming Options
– Byte/Page Program (1 to 256 Bytes)
– Sequential Program Mode Capability
• Automatic Checking and Reporting of Erase/Program Failures
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 5 mA Active Read Current (Typical)
– 10 µA Deep Power-down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-miland 200-mil wide)
– 8-contact MLF (5 x 6 mm)

Specifications

Attribute Attribute Value
Manufacturer Adesto Technologies
Product Category Memory ICs
Manufacturer Adesto Technologies
Product-Category Flash Memory
RoHS Details
Brand Adesto Technologies

Descriptions

FLASH Memory IC 4Mb (512K x 8) SPI 104MHz 8-UDFN (2x3)
Flash Serial-SPI 1.8V/2.5V/3.3V 4M-bit 8-bit 7.5ns T/R
Flash Memory 8-UDFN (2x3x0.6), IND TEMP, 1.65V, T&R

China AT25DF041B-MAHN-T IC FLASH 4MBIT SPI 104MHZ 8UDFN Renesas Design Germany GmbH factory

AT25DF041B-MAHN-T IC FLASH 4MBIT SPI 104MHZ 8UDFN Renesas Design Germany GmbH Images

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