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71V424S10YG8 IC SRAM 4MBIT PARALLEL 36SOJ Renesas Electronics America Inc

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71V424S10YG8 IC SRAM 4MBIT PARALLEL 36SOJ Renesas Electronics America Inc

Brand Name : Renesas Electronics America Inc

Model Number : 71V424S10YG8

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Asynchronous

Memory Size : 4Mbit

Memory Organization : 512K x 8

Memory Interface : Parallel

Clock Frequency : -

Write Cycle Time - Word, Page : 10ns

Access Time : 10 ns

Voltage - Supply : 3V ~ 3.6V

Operating Temperature : 0°C ~ 70°C (TA)

Mounting Type : Surface Mount

Package / Case : 36-BSOJ (0.400", 10.16mm Width)

Supplier Device Package : 36-SOJ

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Product Details

Description

The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high speed memory needs.

Features

◆512K x 8 advanced high-speed CMOS Static RAM
◆JEDEC Center Power / GND pinout for reduced noise
◆Equal access and cycle times
— Commercial and Industrial: 10/12/15ns
◆Single 3.3V power supply
◆One Chip Select plus one Output Enable pin
◆Bidirectional data inputs and outputs directly TTL-compatible
◆Low power consumption via chip deselect
◆Available in 36-pin, 400 mil plastic SOJ package and 44-pin, 400 mil TSOP.

Specifications

Attribute Attribute Value
Manufacturer Integrated Circuit Systems
Product Category Memory ICs
Series 71V424
Type Asynchronous
Packaging Alternate Packaging
Mounting-Style SMD/SMT
Package-Case 36-BSOJ (0.400", 10.16mm Width)
Operating-Temperature 0°C ~ 70°C (TA)
Interface Parallel
Voltage-Supply 3 V ~ 3.6 V
Supplier-Device-Package 36-SOJ
Memory Capacity 4M (512K x 8)
Memory-Type SRAM - Asynchronous
Speed 10ns
Access-Time 10 ns
Format-Memory RAM
Maximum Operating Temperature + 70 C
Operating temperature range 0 C
Interface-Type Parallel
Organization 512 k x 8
Supply-Current-Max 180 mA
Part-#-Aliases 71V424 IDT71V424S10YG8
Supply-Voltage-Max 3.6 V
Supply-Voltage-Min 3 V
Package-Case SOJ-36
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
K6R4008V1B-JC10
Memory		 Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, SOJ-36 Samsung Semiconductor 71V424S10YG8 vs K6R4008V1B-JC10
71V424L10YGI8
Memory		 SOJ-36, Reel Integrated Device Technology Inc 71V424S10YG8 vs 71V424L10YGI8
AS7C34096A-10JCN
Memory		 Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, SOJ-36 Alliance Memory Inc 71V424S10YG8 vs AS7C34096A-10JCN
71V424S10YGI8
Memory		 SOJ-36, Reel Integrated Device Technology Inc 71V424S10YG8 vs 71V424S10YGI8
IS61LV5128AL-10KLI
Memory		 Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-36 Integrated Silicon Solution Inc 71V424S10YG8 vs IS61LV5128AL-10KLI
AS7C34096A-10JIN
Memory		 Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, SOJ-36 Alliance Memory Inc 71V424S10YG8 vs AS7C34096A-10JIN
AS7C34096A-10JI
Memory		 Standard SRAM, 512KX8, 10ns, CMOS, PDSO36 Alliance Memory Inc 71V424S10YG8 vs AS7C34096A-10JI

Descriptions

SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM

China 71V424S10YG8 IC SRAM 4MBIT PARALLEL 36SOJ Renesas Electronics America Inc factory

71V424S10YG8 IC SRAM 4MBIT PARALLEL 36SOJ Renesas Electronics America Inc Images

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