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MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

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MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

Name: MT46V16M16CY5B ITM IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc
Brand: Micron Technology Inc.
Price: 1 USD

Brand Name : Micron Technology Inc.

Model Number : MT46V16M16CY-5B IT:M

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - DDR

Memory Size : 256Mbit

Memory Organization : 16M x 16

Memory Interface : Parallel

Clock Frequency : 200 MHz

Write Cycle Time - Word, Page : 15ns

Access Time : 700 ps

Voltage - Supply : 2.5V ~ 2.7V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 60-TFBGA

Supplier Device Package : 60-FBGA (8x12.5)

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Product Details

GENERAL DESCRIPTION

The DDR333 SDRAM is a high-speed CMOS, dy namic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 continues to use the JEDEC standard SSTL_2 interface and the 2n-prefetch architecture.

FEATURES

• 167 MHz Clock, 333 Mb/s/p data rate
•VDD= +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte)
• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two - one per byte)
• Programmable burst lengths: 2, 4, or 8
• Concurrent Auto Precharge option supported
• Auto Refresh and Self Refresh Modes
• FBGA package available
• 2.5V I/O (SSTL_2 compatible)
• tRAS lockout (tRAP =tRCD)
• Backwards compatible with DDR200 and DDR266

Specifications

Attribute	Attribute Value
Manufacturer	Micron Technology Inc.
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	60-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	2.5 V ~ 2.7 V
Supplier-Device-Package	60-FBGA (8x12.5)
Memory Capacity	256M (16M x 16)
Memory-Type	DDR SDRAM
Speed	5ns
Format-Memory	RAM

Descriptions

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5)

DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.6V 60-Pin FBGA

China MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc. factory

MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc. Images

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