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MT47H128M4CF-25E:G IC DRAM 512MBIT PARALLEL 60FBGA Micron Technology Inc.

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MT47H128M4CF-25E:G IC DRAM 512MBIT PARALLEL 60FBGA Micron Technology Inc.

Brand Name : Micron Technology Inc.

Model Number : MT47H128M4CF-25E:G

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - DDR2

Memory Size : 512Mbit

Memory Organization : 128M x 4

Memory Interface : Parallel

Clock Frequency : 400 MHz

Write Cycle Time - Word, Page : 15ns

Access Time : 400 ps

Voltage - Supply : 1.7V ~ 1.9V

Operating Temperature : 0°C ~ 85°C (TC)

Mounting Type : Surface Mount

Package / Case : 60-TFBGA

Supplier Device Package : 60-FBGA (8x10)

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Product Details

DDR2 SDRAM

MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks

Features

• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Series -
Packaging Tray
Package-Case 60-TFBGA
Operating-Temperature 0°C ~ 85°C (TC)
Interface Parallel
Voltage-Supply 1.7 V ~ 1.9 V
Supplier-Device-Package 60-FBGA (8x10)
Memory Capacity 512M (128Mx4)
Memory-Type DDR2 SDRAM
Speed 2.5ns
Format-Memory RAM

Descriptions

SDRAM - DDR2 Memory IC 512Mb (128M x 4) Parallel 400MHz 400ps 60-FBGA (8x10)
DRAM Chip DDR2 SDRAM 512Mbit 128Mx4 1.8V 60-Pin FBGA

China MT47H128M4CF-25E:G IC DRAM 512MBIT PARALLEL 60FBGA Micron Technology Inc. factory

MT47H128M4CF-25E:G IC DRAM 512MBIT PARALLEL 60FBGA Micron Technology Inc. Images

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