Sign In | Join Free | My chinacomputerparts.com
China Sanhuang electronics (Hong Kong) Co., Limited logo
Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
Verified Supplier

3 Years

Home > Flash Memory IC >

71V124SA10PHG8 IC SRAM 1MBIT PARALLEL 32TSOP II Renesas Electronics America Inc

Sanhuang electronics (Hong Kong) Co., Limited
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

71V124SA10PHG8 IC SRAM 1MBIT PARALLEL 32TSOP II Renesas Electronics America Inc

Brand Name : Renesas Electronics America Inc

Model Number : 71V124SA10PHG8

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Asynchronous

Memory Size : 1Mbit

Memory Organization : 128K x 8

Memory Interface : Parallel

Clock Frequency : -

Write Cycle Time - Word, Page : 10ns

Access Time : 10 ns

Voltage - Supply : 3.15V ~ 3.6V

Operating Temperature : 0°C ~ 70°C (TA)

Mounting Type : Surface Mount

Package / Case : 32-SOIC (0.400", 10.16mm Width)

Supplier Device Package : 32-TSOP II

Contact Now

Product Details

Description

The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high
speed memory needs. The JEDEC center power/GND pinout reduces noise generation and improves system performance.
The IDT71V124 has an output enable pin which operates as fast as 5ns, with address access times as fast as 9ns available. All bidirectional inputs and outputs of the IDT71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Features

◆ 128K x 8 advanced high-speed CMOS static RAM
◆JEDEC revolutionary pinout (center power/GND) for reduced noise
◆Equal access and cycle times
– Commercial: 10/12/15/20ns
– Industrial: 10/12/15/20ns
◆One Chip Select plus one Output Enable pin
◆Inputs and outputs are LVTTL-compatible
◆Single 3.3V supply
◆Low power consumption via chip deselect
◆Available in a 32-pin 300- and 400-mil Plastic SOJ, and 32-pin Type II TSOP packages.

Specifications

Attribute Attribute Value
Manufacturer Integrated Circuit Systems
Product Category Memory ICs
Series 71V124
Type Asynchronous
Packaging Alternate Packaging
Unit-Weight 0.027023 oz
Mounting-Style SMD/SMT
Package-Case 32-SOIC (0.400", 10.16mm Width)
Operating-Temperature 0°C ~ 70°C (TA)
Interface Parallel
Voltage-Supply 3.15 V ~ 3.6 V
Supplier-Device-Package 32-TSOP II
Memory Capacity 1M (128K x 8)
Memory-Type SRAM - Asynchronous
Speed 10ns
Access-Time 10 ns
Format-Memory RAM
Maximum Operating Temperature + 70 C
Operating temperature range 0 C
Interface-Type Parallel
Organization 128 k x 8
Supply-Current-Max 145 mA
Part-#-Aliases 71V124 IDT71V124SA10PHG8
Supply-Voltage-Max 3.6 V
Supply-Voltage-Min 3.15 V
Package-Case SOIC-32
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
IS63LV1024L-10T
Memory
128KX8 STANDARD SRAM, 10ns, PDSO32, 0.400 INCH, TSOP2-32 ABLIC Inc 71V124SA10PHG8 vs IS63LV1024L-10T
IDT71V124SA10PHG
Memory
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32 Integrated Device Technology Inc 71V124SA10PHG8 vs IDT71V124SA10PHG
IDT71V124SA10PHI
Memory
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, TSOP2-32 Integrated Device Technology Inc 71V124SA10PHG8 vs IDT71V124SA10PHI
71V124SA10PHGI
Memory
TSOP-32, Tube Integrated Device Technology Inc 71V124SA10PHG8 vs 71V124SA10PHGI
71V124SA10PHG
Memory
TSOP-32, Tube Integrated Device Technology Inc 71V124SA10PHG8 vs 71V124SA10PHG
IDT71V124SA10PHG8
Memory
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, TSOP2-32 Integrated Device Technology Inc 71V124SA10PHG8 vs IDT71V124SA10PHG8
CY7C1019CV33-10ZXA
Memory
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, LEAD FREE, TSOP2-32 Cypress Semiconductor 71V124SA10PHG8 vs CY7C1019CV33-10ZXA
CY7C1019CV33-10ZXC
Memory
128KX8 STANDARD SRAM, 10ns, PDSO32, LEAD FREE, TSOP2-32 Rochester Electronics LLC 71V124SA10PHG8 vs CY7C1019CV33-10ZXC
IS63LV1024L-10TL
Memory
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, LEAD FREE, PLASTIC, TSOP2-32 Integrated Silicon Solution Inc 71V124SA10PHG8 vs IS63LV1024L-10TL
IS63LV1024L-10TLI
Memory
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, LEAD FREE, PLASTIC, TSOP2-32 Integrated Silicon Solution Inc 71V124SA10PHG8 vs IS63LV1024L-10TLI

Descriptions

SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 10ns 32-TSOP II
SRAM 128Kx8 ASYNCHRONOUS 3.3V STATIC RAM

China 71V124SA10PHG8 IC SRAM 1MBIT PARALLEL 32TSOP II Renesas Electronics America Inc factory

71V124SA10PHG8 IC SRAM 1MBIT PARALLEL 32TSOP II Renesas Electronics America Inc Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Sanhuang electronics (Hong Kong) Co., Limited
*Subject:
*Message:
Characters Remaining: (0/3000)